schottky barrier diode RB168M-40 l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)small power mold type. (pmdu) 2)low i r 3)high reliability l construction silicon epitaxial l structure l taping specifications (unit : mm) l absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c l electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - 0.60 0.65 v i f =1.0a reverse current i r - 0.05 0.55 a v r =40v storage temperature - 55 to + 150 (*1)mounted on epoxy board. 180half sine wave parameter average rectified forward current (*1) 1 forward current surge peak (60hz ? 1cyc) 30 junction temperature 150 parameter limits reverse voltage (repetitive) 40 reverse voltage (dc) 40 rohm : pmdu jedec :sod - 123 manufacture date pmdu 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. >>>??<>>>y >y>>a?<>>>y >t>>a?<>>>y >?>>?<>>>t >>>??<>>>y >>>y?<>>>y fff>>>>> 1.2 3.05 0.85 >>>?<>>>y >t>>?<>>>> 3 >y>>>?<>>>> >y>>?>y?<>>>y >>>?<>>>y 3 >y>>?<>>>y >?>>?<>>>> >y>>?>?<>>>y >?>>?<>>>t >>>t>?<>>>> 1.5max >?>>?>y?<>>>y
RB168M-40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) mounted on epoxy board 0 50 100 150 200 0.1 1 10 100 t ifsm 0 20 40 60 80 100 1 10 100 0 5 10 15 20 25 30 ave:8.0ns ta=25 i f =0.5a i r =1a irr=0.25 *i r n=10pcs 0 50 100 150 200 200 210 220 230 240 250 260 270 280 290 300 ave:244.4pf ta=25 f=1mhz v r =0v n=10pcs 0 10 20 30 40 50 60 70 80 90 100 550 560 570 580 590 600 1 10 100 1000 0 10 20 30 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 forward voltage : v f (mv) v f - i f characteristics forward current:i f (a) reverse voltage : v r (v) v r - i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics trr dispersion map reverse recovery time:trr(ns) ta=75 ta=150 f=1mhz ave:569.2mv ta=25 v f =1a n=30pcs ta=25 v r =40v n=30pcs ave:48.6na ave:84.0a 8.3ms ifsm 1cyc 8.3ms ta= - 25 ta=25 ta= - 25 ta=125 ta=25 ta=75 ta=150 reverse current:i r ( a) dc d=1/2 sin( 180) 8.3ms ifsm 1cyc ta=125 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB168M-40 0 5 10 15 20 25 30 ave:6.1kv no break at 30kv c=100pf r=1.5k c=200pf r=0 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 0 0.005 0.01 0 10 20 30 40 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( ) derating curve (io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve (io - tc) t tj=150 d=t/t t v r io v r =20v 0a 0v t tj=150 d=t/t t v r io v r =20v 0a 0v electrostatic discharge test esd(kv) esd dispersion map sin( 180) dc d=1/2 sin( 180) dc d=1/2 sin( 180) dc d=1/2 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
|
